qlf 063a /QLF063D 660 nm 1 0 0mw fp laser to - can c00 100 - 0 1 j anuary 201 3 1 / 4 1. description the qlf 063a /QLF063D are 66 0 nm quantum well laser device s designed for high output power application . the laser diode is mounted into a to - 56 header including a monitor pd and hermetic sealed with a flat glass cap . 2. features ? 66 0 nm fp - ld ? ? 5.6mm to - can package ? high output power of 1 0 0mw and high slope efficiency ? including monitor pd ? two types of pin assignments: anode common type (qlf063a)/cathode common type (QLF063D) 3. application s ? industrial laser markers ? measuring instruments ? life science applications 4. absolute maximum rating ( cw operation, t c = 25 c , unless otherwise specified) parameter symbol rating unit optical o utput p ower p o 130 mw ld r everse v oltage v rld 2 v pd r everse v oltage v rpd 30 v operati on t emperature t c - 1 0 to 6 0 ? stg - 4 0 to 85 ?
qlf063a /QLF063D c00 100 - 01 2 / 4 5. optical an d electrical charact eristics (t c = 25 c , unless otherwise specified) parameter symbol test condition min typ max unit threshold c urrent i th cw - 55 70 ma operation c urrent i op cw, p o =100 mw - 145 200 ma operation voltage v op cw , p o =100 mw - 2.5 3.0 v slope efficiency ? ? o =5 - 100 mw 0.8 1.1 - w/a moni tor c urrent i m c w , p o =1 00 mw , v rd =5 v 50 28 0 600 ? ? p c w , p o = 100 mw 655 660 665 n m far filed pattern horizontal ? h c w , p o = 1 0 0 mw 7 10 13 deg. far filed pattern vertical ? v c w , p o = 1 0 0 mw 11 14 17 deg. beam angle h orizontal d ? h c w , p o =100 mw - 3 - 3 deg. beam angle vertical d ? v c w , p o =100 mw - 3 - 3 deg. 0 10 20 30 40 50 60 70 80 90 100 - 20 0 20 40 60 80 ith [ma] temperature [deg.c] 0 20 40 60 80 100 120 140 160 180 200 - 20 0 20 40 60 80 iop [ma] temperature [deg.c] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 - 20 0 20 40 60 80 ? [w/a] temperature [deg.c] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 0 50 100 vop [v] temperature [deg.c] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 - 20 0 20 40 60 80 im [ma] temperature [deg.c] 650 652 654 656 658 660 662 664 666 668 - 20 0 20 40 60 80 ? p [nm] temperature [deg.c]
qlf063a /QLF063D c00 100 - 0 1 3 / 4 0 20 40 60 80 100 120 0 50 100 150 200 250 optical power [mw] operating current [ma] tc=25 deg.c tc=60 deg.c tc= - 10 deg.c 0.0 1.0 2.0 3.0 4.0 0 50 100 150 200 250 operating voltage [v] operating current [ma] tc=25 deg.c tc=60 deg.c tc= - 10 deg.c 645 650 655 660 665 670 675 optical intensity [a.u.] wavelength [nm] tc= - 10 deg.c tc= 25 deg.c tc= 60 deg.c - 45 - 30 - 15 0 15 30 45 optical intensity [a.u.] angle [deg] tc=25 deg.c tc=60 deg.c ffp - h ffp - v
qlf063a /QLF063D c00 100 - 0 1 4 / 4 6. o utline drawings 7. n otice ? safety information this p roduct is classified as class 3b laser product, and complies with 21 cfr part 1040.10. please do not take a look laser lighting in operations since laser devices may cause troubles to human eyes. please do not eat, burn, break and make chemical process of the products since they contain gaas material. ? hand l ing products semiconductor lasers ar e easily damaged by external stress such as excess temperature and esd. please pay attention to handling products, and use within range of maximum ratings. qd laser takes no responsibility for any failure or unusual operation resulting from improper handli n g, or unusual physical or electrical stress. ? rohs this product conforms to rohs compliance related eu directive 2002/95/ec. qd laser, inc. contact : info @qdlaser.com http://www.qdlaser.com copyright 201 3 all rights reser ved by qd laser , inc. keihin bldg. 1f 1 - 1 minamiwatarida - cho, kawasaki - ku, kawasaki, kanagawa zip 210 - 0 855 japan all company or product names mentioned herein are trademarks or registered trademarks o f their respective owners. information provided in this data sheet is accurate at time of publication and is subject to change without advance notice.
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